METHOD FOR FORMING COBALT SILICIDE FILM OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming cobalt silicide film of semiconductor device is provided to magnify a process margin by forming a Co-Ti layer by a primary heat processing process of a suitable temperature and removing the formed Co-Ti layer by a chemical process. CONSTITUTION: An isolation oxidation film(70), a poly silicon gate(30), and a spacer oxidation film(40) are successively formed. A titanium film(50) and a cobalt film(60) are deposited on the a silicon substrate(10). A Co-Ti layer(72) is formed on an upper portion of the isolation oxidation film(70) and the spacer oxidation film(40). A cobalt silicide film(52) is formed to the poly silicon gate(30) and a junction region(20). A no-reaction cobalt is reacted with a titanium and then a Co-Ti-Si layer(62) is formed. The Co-Ti layer(72) located on the upper portion of the isolation oxidation film(70) and the spacer oxidation film(40) is removed. The titanium located in the poly silicon gate(30) and the junction region(20) is reacted with a nitrogen and then a titanium nitration film(TiN) is formed.