Trench-based power semiconductor devices with increased breakdown voltage characteristics

摘要

Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.

主权项

1. A trench shielded Schottky barrier rectifier device, comprising:
a first trench extending into a semiconductor region; a first dielectric layer lining opposing sidewalls of the first trench; a first shield electrode disposed in the first trench; a second trench extending into the semiconductor region parallel to the first trench; a second dielectric layer lining opposing sidewalls of the second trench; a second shield electrode disposed in the second trench; a mesa region defined by the first trench and the second trench, the mesa region having a width, a height, and a top surface; and a Schottky contact disposed at the top surface of the mesa, the Schottky contact having an end spaced from a terminal end of the first trench by at least a distance.