发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 A fan-out package includes a molding compound, a conductive plug, and a stress buffering unit. The conductive plug is located in the molding compound. The stress buffering unit is located between the conductive plug and the molding compound. A stress buffering layer has a coefficient of thermal expansion (CTE). The CTE of the stress buffer layer is located between the CTE of the molding compound and the CTE of the conductive plug. A method for manufacturing a 3D semiconductor structure includes the steps of: plating the substrate with a post; and arranging the stress buffering unit on the sidewall of the post. The present invention further includes the steps of surrounding the stress buffering unit with the molding compound.
申请公布号 KR20150004738(A) 申请公布日期 2015.01.13
申请号 KR20140077266 申请日期 2014.06.24
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LIN JING CHENG;HUNG JUI PIN;TSAI PO HAO
分类号 H01L23/48;H01L23/28 主分类号 H01L23/48
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