| 发明名称 | 3D-packages and methods for forming the same | ||
| 摘要 | A package includes an interposer, which includes a first substrate free from through-vias therein, redistribution lines over the first substrate, and a first plurality of connectors over and electrically coupled to the redistribution lines. A first die is over and bonded to the first plurality of connectors. The first die includes a second substrate, and through-vias in the second substrate. A second die is over and bonded to the plurality of connectors. The first die and the second die are electrically coupled to each other through the redistribution lines. A second plurality of connectors is over the first die and the second die. The second plurality of connectors is electrically coupled to the first plurality of connectors through the through-vias in the second substrate. | ||
| 申请公布号 | US8933551(B2) | 申请公布日期 | 2015.01.13 |
| 申请号 | US201313789866 | 申请日期 | 2013.03.08 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Chang Chin-Chuan;Lin Jing-Cheng;Yu Chen-Hua |
| 分类号 | H01L23/02;H01L21/00;H01L23/495;H01L25/065;H01L23/00;H01L23/48;H01L23/538;H01L23/498;H01L21/56;H01L21/78;H01L23/14;H01L23/31 | 主分类号 | H01L23/02 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A package comprising: an interposer comprising: a first substrate free from through-vias therein;redistribution lines over the first substrate; anda first plurality of connectors over and electrically coupled to the redistribution lines; a first die over and bonded to the first plurality of connectors, wherein the first die comprises: a second substrate; andthrough-vias in the second substrate; a second die over and bonded to the plurality of connectors, wherein the first die and the second die are electrically coupled to each other through the redistribution lines; and a second plurality of connectors over the first die and the second die, wherein the second plurality of connectors is electrically coupled to the first plurality of connectors through the through-vias in the second substrate. | ||
| 地址 | Hsin-Chu TW | ||