METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of superjunction semiconductor elements which can manufacture easily and with good massproductivity where the increase of the current capacity by the reduction of ON resistance is possible though they are of high breakdown voltage, by improving the trade off relation between the ON resistance and the breakdown voltage. SOLUTION: A part of the surface of a semiconductor substrate 1 is masked, and an uneven structure which has a comb-shaped cross section is made by selective epitaxial growth. This is equivalent to a trench structure at high aspect ratio, and as compared with a trench etching process, it is damage-free. Moreover, an uneven structure high in aspect ratio or a trench structure is buried with an epitaxial layer 5 by the selective epitaxial growth utilizing the rectilinear propagation property of the molecular beam by molecular beam epitaxy or the anisotropic growth effect by a vapor phase growth (CVD) method or a liquid phase growth (LPE) method.