| 发明名称 |
PATTERN FORMATION METHOD |
| 摘要 |
According to one embodiment, a pattern formation method includes forming a layer above an underlying layer. The layer includes a block copolymer. The method further includes forming a first phase including a first polymer and a second phase including a second polymer in the layer by phase-separating the block copolymer, and selectively removing the first phase by dry etching the layer using an etching gas including carbon monoxide. |
| 申请公布号 |
US2015011089(A1) |
申请公布日期 |
2015.01.08 |
| 申请号 |
US201414202494 |
申请日期 |
2014.03.10 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Yamamoto Hiroshi;Imamura Tsubasa;Hayashi Hisataka;Omura Mitsuhiro |
| 分类号 |
H01L21/308 |
主分类号 |
H01L21/308 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A pattern formation method comprising:
forming a layer above an underlying layer, the layer including a block copolymer; forming a first phase including a first polymer and a second phase including a second polymer in the layer by phase-separating the block copolymer; and selectively removing the first phase by dry etching the layer using an etching gas including carbon monoxide. |
| 地址 |
Minato-ku JP |
