METHODS OF FABRICATING SEMICONDUCTOR STRUCTURES

摘要

Semiconductor structures including an etch stop material between a substrate and a stack of alternating insulating materials and first conductive materials, wherein the etch stop material comprises an amorphous aluminum oxide on the substrate and a crystalline aluminum oxide on the amorphous aluminum oxide; a channel material extending through the stack; and a second conductive material between the channel material and at least one of the first conductive materials in the stack of alternating insulating materials and first conductive materials, wherein the second conductive material is not between the channel material and the etch stop material. Also disclosed are methods of fabricating such semiconductor structures.

主权项

1. A method of fabricating a semiconductor structure, the method comprising:
forming an etch stop material between a substrate and a stack of alternating insulating materials and first conductive materials, the etch stop material comprising an amorphous aluminum oxide in contact with the substrate and a crystalline aluminum oxide in contact with the amorphous aluminum oxide; forming an opening through the stack of alternating insulating materials and first conductive materials; removing a portion of each of the first conductive materials to form a plurality of first recesses adjacent each of the first conductive materials; extending a depth of the opening into the crystalline aluminum oxide and the amorphous aluminum oxide to form a second recess in the amorphous aluminum oxide; filling the second recess with an oxide material and a nitride material; and filling the plurality of first recesses with a second conductive material.