发明名称 Lithography Apparatus and System, a Method of Calibrating a Lithography Apparatus, and Device Manufacturing Methods
摘要 There is disclosed a lithography or exposure apparatus and system, a method of calibrating a lithography or exposure apparatus, and a device manufacturing method. In an embodiment, there is provided an exposure system including a first exposure apparatus and a second exposure apparatus, wherein a data processing device of each of the first and second apparatuses is configured to calculate a control signal using a response function; the combined performance of the programmable patterning device and projection system of each of the first and second apparatuses differs, at least due to manufacturing error; and the response function used by the first apparatus is identical to the response function used by the second apparatus.
申请公布号 US2015009481(A1) 申请公布日期 2015.01.08
申请号 US201314377152 申请日期 2013.01.24
申请人 ASML Netherlands B.V 发明人 Tinnemans Patricius Aloysius Jacobus
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
主权项 1. An exposure system comprising a first exposure apparatus and a second exposure apparatus, wherein the first and second apparatuses each comprise: a programmable patterning device configured to produce a plurality of radiation beams to apply individually controllable doses to a target, a projection system configured to project each of the radiation beams onto a respective location on the target, and a data processing device configured to provide a control signal for the programmable patterning device, the control signal representing the set of target dose values to be applied by the plurality of radiation beams to form a desired dose pattern on the target, wherein: the data processing device of the first apparatus is configured to calculate the control signal using a response function that describes the relationship between a set of target dose values and a desired or requested resulting dose pattern on the target for the first apparatus,the data processing device of the second apparatus is configured to calculate the control signal using a response function that describes the relationship between a set of target dose values and a desired or requested resulting dose pattern on the target for the second apparatus,the combined performance of the programmable patterning device and projection system of the first apparatus differs from the combined performance of the programmable patterning device and projection system of the second apparatus, at least due to manufacturing error, andthe response function used by the first apparatus matches the response function used by the second apparatus.
地址 Veldhoven NL