SELF-ALIGNED BIPOLAR JUNCTION TRANSISTORS

摘要

Device structures and design structures for a bipolar junction transistor. An intrinsic base is formed on the substrate, a terminal is formed on the intrinsic base, and an extrinsic base is formed that is arranged in juxtaposition with the intrinsic base on the substrate. The intrinsic base and terminal are respectively comprised of first and second semiconductor materials.

主权项

1. A device structure for a bipolar junction transistor formed using a substrate, the device structure comprising:
an intrinsic base on the substrate, the intrinsic base comprised of a first semiconductor material; a first terminal on the intrinsic base, the first terminal separated from the substrate by the intrinsic base, and the first terminal comprised of a second semiconductor material different from the first semiconductor material; and an extrinsic base arranged in juxtaposition with the intrinsic base on the substrate.