| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that reduces variations in the resistance value of a resistance element and has excellent device characteristics. ! SOLUTION: The semiconductor device comprises: an element isolation region disposed in a semiconductor substrate 100; an active region 110 which is surrounded by the element isolation region and extends in a first direction and which has a resistance element portion 190 and a wiring connection portion 192 disposed in both ends of the first direction; two gate patterns 126 which face each other across the resistance element portion in a second direction that is different from the first direction; a spacer 130 which surrounds each side surface of the two gate patterns and buries the space between the two gate patterns that face each other and which covers the resistance element portion; a first diffusion layer 115 disposed on a surface of the active region covered by the spacer; and a second diffusion layer 120 disposed in each wiring conn |
