发明名称 |
VERTICAL SEMICONDUCTOR DEVICE |
摘要 |
A vertical semiconductor device includes a channel structure extending from a substrate in a first direction perpendicular to an upper surface of the substrate, and a ground selection line, word lines, and a string selection line sequentially formed on a side surface of the channel structure in the first direction to be separated from one another. The channel structure includes a protruding region formed in a side wall portion of the channel structure between the ground selection line and the upper surface of the substrate, the protruding region protruding in a horizontal direction perpendicular to the first direction. |
申请公布号 |
US2015008499(A1) |
申请公布日期 |
2015.01.08 |
申请号 |
US201414267909 |
申请日期 |
2014.05.02 |
申请人 |
Lee Jae-goo;Park Young-woo;Park Jin-taek |
发明人 |
Lee Jae-goo;Park Young-woo;Park Jin-taek |
分类号 |
H01L29/78;H01L29/792;H01L29/788 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A vertical semiconductor device comprising:
a channel structure extending from a substrate in a first direction perpendicular to an upper surface of the substrate; and a ground selection line, word lines, and a string selection line sequentially formed on a side surface of the channel structure in the first direction to be separated from one another, wherein the channel structure comprises a protruding region formed in a side wall portion of the channel structure between the ground selection line and the upper surface of the substrate, the protruding region protruding in a horizontal direction perpendicular to the first direction. |
地址 |
Suwon-si KR |