| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a SiC substrate exhibiting excellent productivity and yield, and capable of removing the surface roughness of an epitaxial layer without shaving an epitaxial film of a Si surface more than required, even when double-sided polishing is performed by CMP method, while furthermore the roughness of the C surface can be removed effectively.SOLUTION: A method of manufacturing a SiC substrate includes at least a CMP step for performing double-sided polishing of both the Si surface 1a and the C surface 1b provided in a SiC substrate 1, by CMP(Chemical Mechanical Polishing) method, while setting the C surface/Si surface processing selection ratio to 3.0 or more. |
