| 发明名称 |
METAL-OXIDE-SEMICONDUCTOR (MOS) DEVICES WITH INCREASED CHANNEL PERIPHERY AND METHODS OF MANUFACTURE |
| 摘要 |
A semiconductor device includes a drift layer disposed on a substrate. The drift layer has a non-planar surface having a plurality of repeating features oriented parallel to a length of a channel of the semiconductor device. Further, each the repeating features have a dopant concentration higher than a remainder of the drift layer. |
| 申请公布号 |
US2015008448(A1) |
申请公布日期 |
2015.01.08 |
| 申请号 |
US201313934004 |
申请日期 |
2013.07.02 |
| 申请人 |
General Electric Company |
发明人 |
Bolotnikov Alexander Viktorovich;Losee Peter Almern |
| 分类号 |
H01L29/78;H01L29/66;H01L29/16 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a drift layer disposed on a substrate, wherein the drift layer comprises a non-planar surface comprising a plurality of repeating features oriented parallel to a length of a channel of the semiconductor device, and wherein each of the repeating features has dopant concentration higher than a remainder of the drift layer. |
| 地址 |
Schenectady NY US |
