| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent the reduction of a short circuit current owing to an increase of recombination rate. <P>SOLUTION: A polyimide film 32 is formed on a light receiving surface side of a multilayer semiconductor layer 22 consisted of a solar cell layer 23 and a contact layer 24 as a cover film. Consequently, a low heat contraction film with a ratio of the heat contraction of 2.0% or less under the condition of 150°C-30 min is formed on a light receiving surface side of an n-type electrode 25, so that the multilayer semiconductor layer 22 formed with a thickness of 0.5μm or more and 30μm or less in order to impart flexibility thereto becomes unlikely to be influenced by strain caused by stress from a polyimide film 32. It is therefore possible to prevent troubles such as the reduction of a short circuit current caused by an increase of recombination rate in the semiconductor due to the strain. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
