| 发明名称 |
SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES |
| 摘要 |
<p>Methods of forming microelectronic structures are described. Embodiments of those methods include forming a nanowire device comprising a substrate comprising source/drain structures adjacent to spacers, and nanowire channel structures disposed between the spacers, wherein the nanowire channel structures are vertically stacked above each other.</p> |
| 申请公布号 |
EP2647038(A4) |
申请公布日期 |
2015.01.07 |
| 申请号 |
EP20110844167 |
申请日期 |
2011.11.23 |
| 申请人 |
INTEL CORPORATION |
发明人 |
KUHN, KELIN J.;KIM, SEIYON;RIOS, RAFAEL;CEA, STEPHEN M.;GILES, MARTIN D.;CAPPELLANI, ANNALISA;RAKSHIT, TITASH;CHANG, PETER;RACHMADY, WILLY |
| 分类号 |
H01L21/336;B82Y10/00;H01L29/06;H01L29/417;H01L29/423;H01L29/66;H01L29/775;H01L29/78;H01L29/786 |
主分类号 |
H01L21/336 |
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代理人 |
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