Transistor and method of fabricating the same

摘要

A transistor including a gate, an active stacked structure, a dielectric layer, a source and a drain. The gate is located over a first surface of the dielectric layer. The active stacked structure, including a first active layer and a second active layer, is located over a second surface of the dielectric layer. The source and the drain are located over the second surface of the dielectric layer and at two sides of the active stacked structure and extend between the first active layer and the second active layer of the active stacked structure.

主权项

1. A transistor, comprising:
a dielectric layer having a first surface and a second surface; a gate located on the first surface of the dielectric layer; an active stacked structure located on the second surface of the dielectric layer, wherein the active stacked structure is consisted of two layers including a first active layer and a second active layer, wherein the second active layer is a top layer of the active stacked structure, a material of the first active layer comprises a first semiconductor and a material of the second active layer comprises a second semiconductor, a composition of the first semiconductor and a composition of the second semiconductor are the same, and a constituent ratio of oxygen of the first semiconductor is lower than a constituent ratio of oxygen of the second semiconductor; and a source and a drain located on the second surface of the dielectric layer and at two sides of the active stacked structure respectively, wherein the source and the drain extend between the first active layer and the second active layer of the active stacked structure.