Diode segmentation in memory

摘要

Memory devices, memory arrays, and methods of operation of memory arrays with segmentation. Segmentation elements can scale with the memory cells, and may be uni-directional or bi-directional diodes. Biasing lines in the array allow biasing of selected and unselected select devices and segmentation elements with any desired bias, and may use biasing devices of the same construction as the segmentation elements.

主权项

1. A memory device, comprising:
a group of memory cells, each cell connected in series between a local first access line and a respective one of a plurality of second access lines; a segmentation element connected between the local first access line and a global first access line; a first biasing line; a second biasing line; a first biasing device connected between the first biasing line and the local first access line; and a second biasing device connected between the second biasing line and the local first access line; wherein the first and second biasing lines are configured to receive a same voltage during an access operation.