MANUFACTURING OF LOW DEFECT DENSITY FREE-STANDING GALLIUM NITRIDE SUBSTRATES AND DEVICES FABRICATED THEREOF

摘要

The invention relates to a method for manufacturing a single crystal of nitride by epitaxial growth on a support (100) comprising a growth face (105), the method comprising the steps of: -formation of a sacrificial bed (101) on the support (100), - formation of pillars (102) on said sacrificial bed, said pillars being made of a material compatible with GaN epitaxial growth, - growth of a nitride crystal layer (103) on the pillars, under growing conditions such that the nitride crystal layer does not extend down to the support in holes (107) formed between the pillars, -removing the nitride crystal layer from the support.