Power semiconductor device and method of fabricating the same

摘要

Provided are a power semiconductor device and method of fabricating the same, in particular a power semiconductor device such as an Insulated Gate Bipolar Transistor (IGBT) including a cell region with a trench structure formed to include a dummy trench and a first trench and a termination region with a termination ring formed surrounding the cell region. Such a power semiconductor device is designed to operable with high power conditions such as when an operating voltage is 600 V, 1200 V and so on.

主权项

1. A power semiconductor device comprising:
a substrate; a trench structure situated in the substrate and comprising first trenches and dummy trenches formed adjacent to the first trenches; a first well region of a second conductivity type situated between the first trenches; a base region of a first conductivity type situated on the first well region; a source region of the second conductivity type and a first contact region of the first conductivity type situated in the base region; gate insulating layers situated in the first trenches and the dummy trenches; gate electrodes situated on the gate insulating layers; a field stop layer situated below the base region; a collector layer and a drain electrode situated below the field stop layer; and a dummy cell region situated between the first trenches and the dummy trenches, wherein the dummy cell region has no channel region.