| 发明名称 | Semiconductor device and production method therefor | ||
| 摘要 | An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, and bonding the semiconductor element and the base by applying heat having a temperature of 200 to 900° C. to the semiconductor device and the base. | ||
| 申请公布号 | US8927341(B2) | 申请公布日期 | 2015.01.06 |
| 申请号 | US201414166540 | 申请日期 | 2014.01.28 |
| 申请人 | Nichia Corporation | 发明人 | Kuramoto Masafumi;Ogawa Satoru;Niwa Miki |
| 分类号 | H01L21/60;H01L23/00;H01L21/18;H01L33/64;H01L33/62 | 主分类号 | H01L21/60 |
| 代理机构 | Birch, Stewart, Kolasch & Birch, LLP | 代理人 | Birch, Stewart, Kolasch & Birch, LLP |
| 主权项 | 1. A method for producing a semiconductor device, the method comprising: for silver formed by silver sputtering, silver vapor deposition or silver plating and provided on a surface of a base, and silver formed by silver sputtering, silver vapor deposition or silver plating and provided on a surface of a semiconductor element, arranging the semiconductor element on the base such that said silver provided on the surface of the semiconductor element directly contacts said silver provided on the surface of the base, and bonding the semiconductor element and the base in an oxidizing environment or oxidizing atmosphere, by applying heat having a temperature of 200 to 900° C. to the semiconductor element and the base. | ||
| 地址 | Anan-Shi JP | ||