发明名称 |
Interconnect structure and method of forming the same |
摘要 |
An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a lower etch stop layer (ESL); an upper low-k (LK) dielectric layer over the lower ESL; a first conductive feature in the upper LK dielectric layer, wherein the first conductive feature has a first metal line and a dummy via contiguous with the first metal line, the dummy via extending through the lower ESL; a first gap along an interface of the first conductive feature and the upper LK dielectric layer; and an upper ESL over the upper LK dielectric layer, the first conductive feature, and the first gap. |
申请公布号 |
US9401329(B2) |
申请公布日期 |
2016.07.26 |
申请号 |
US201313796499 |
申请日期 |
2013.03.12 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chen Jeng-Shiou;Ting Chih-Yuan;Shieh Jyu-Horng;Tsai Minghsing |
分类号 |
H01L23/48;H01L23/52;H01L29/40;H01L23/532;H01L21/768;H01L23/522 |
主分类号 |
H01L23/48 |
代理机构 |
Slater Matsil, LLP |
代理人 |
Slater Matsil, LLP |
主权项 |
1. An interconnect structure, comprising:
a lower etch stop layer (ESL); an upper low-k (LK) dielectric layer over the lower ESL; a first conductive feature in the upper LK dielectric layer, wherein the first conductive feature has a first metal line and a dummy via contiguous with the first metal line, the dummy via extending completely through the lower ESL; a first gap extending along an interface of the metal line of the first conductive feature and the upper LK dielectric layer, the first air gap further extending along an interface of the dummy via and the upper LK dielectric layer; and an upper ESL over the upper LK dielectric layer, the first conductive feature, and the first gap. |
地址 |
Hsin-Chu TW |