| 摘要 |
<p>An exposure method includes measuring coordinates of alignment marks before and after exposing a first wafer to determine a fluctuation amount of a parameter of the alignment; measuring coordinates of alignment marks before exposing a second wafer to determine a parameter of the alignment; and aligning and exposing the second wafer based on a parameter obtained by correcting the parameter with the fluctuation amount determined for the first wafer. A high overlay accuracy can be obtained even when the alignment information is gradually changed, for example, due to the linear expansion and contraction of the substrate during the exposure of the substrate.</p> |
