FINFET-BASED BOOSTING SUPPLY VOLTAGE CIRCUIT AND METHOD

摘要

A memory circuit includes a voltage boosting circuit for generating a voltage that exceeds a voltage supply of the voltage boosting circuit. The voltage boosting circuit includes a first transistor having a first polarity type and a second transistor having a second polarity type opposite the first transistor. The first transistor is a planar transistor, a source of the first transistor being connected with the voltage supply, and a gate of the first transistor receiving a control signal. The second transistor includes a gate formed in at least two planes. A source of the second transistor is connected with the voltage supply, a gate of the second transistor receives the control signal, and a drain of the second transistor is connected with a drain of the first transistor and forms an output of the voltage boosting circuit for generating a boosted supply voltage as a function of the control signal.

主权项

1. A voltage boosting circuit for generating an output voltage having a magnitude that is greater than a voltage generated by a voltage supply of the voltage boosting circuit, the voltage boosting circuit comprising:
a first transistor having a first polarity type, the first transistor being a planar transistor, a first source/drain of the first transistor being adapted for connection with a voltage supply of the voltage boosting circuit, and a gate of the first transistor being adapted to receive a control signal supplied to the voltage boosting circuit; and a second transistor having a gate formed in at least two planes, a first source/drain of the second transistor being adapted for connection with the voltage supply, a gate of the second transistor being adapted to receive the control signal, and a second source/drain of the second transistor being connected with a second source/drain of the first transistor and forming an output of the voltage boosting circuit for generating a boosted supply voltage as a function of the control signal.