FIELD EFFECT TRANSISTOR AND METHOD FOR FORMING THE SAME

摘要

A field effect transistor and a method for forming the same are provided. The field effect transistor comprises: a substrate (100); an ultra-thin insulator layer (200) formed on the substrate (100), wherein a material of the ultra-thin insulator layer (200) is a monocrystalline rare earth oxide or a monocrystalline beryllium oxide; an ultra-thin semiconductor monocrystalline film (300) formed on the ultra-thin insulator layer (200); and a gate stack (400) formed on the ultra-thin semiconductor monocrystalline film (300), and comprising a gate dielectric (410) and a gate electrode (420) formed on the gate dielectric (410).

主权项

1. A field effect transistor, comprising:
a substrate; an ultra-thin insulator layer formed on the substrate, wherein a material of the ultra-thin insulator layer is a monocrystalline rare earth oxide or a monocrystalline beryllium oxide; an ultra-thin semiconductor monocrystalline film formed on the ultra-thin insulator layer; and a gate stack formed on the ultra-thin semiconductor monocrystalline film, and comprising a gate dielectric and a gate electrode formed on the gate dielectric.