| 摘要 |
揭露一改良的内连线结构，及形成内连线结构的方法，以使得内连线结构达到一较低的接触电阻。为了降低内连线结构的接触电阻，一α-相诱导金属层，导入在β-相的一第一钽阻障层上，以诱导后续于其上的钽沉积，进入一α-相钽阻障层的形成。后续沉积的钽阻障层，具有α-相的主要晶体结构，相较于β-相钽阻障层，具有一较低接触电阻。 An improved intercornnect structure and a method for forming the intercornnect structure is disclosed that allows the interconnect structure to achieve a lower Rc. To lower the Rc of the interconnect structure, an α-phase inducing metal layer is introduced on a first Ta barrier layer of β phase to induce the subsequent deposition of Ta thereon into the formation of an α-phase Ta barrier layer. The subsequently deposited Ta barrier layer with a primary crystallographic structure of α |
