发明名称 |
METHODS OF FABRICATING AN F-RAM |
摘要 |
Non-volatile memory cells including complimentary metal-oxide-semiconductor transistors and embedded ferroelectric capacitor and methods of forming the same are described. In one embodiment, the method includes forming on a surface of a substrate a gate level including a gate stack of a MOS transistor, a first dielectric layer overlying the MOS transistor and a first contact extending through the first dielectric layer from a top surface thereof to a diffusion region of the MOS transistor. A local interconnect (LI) layer is deposited over the top surface of the first dielectric layer and the first contact, a ferro stack including a bottom electrode, a top electrode and ferroelectric layer there between deposited over the LI layer, and the ferro stack and the LI layer patterned to form a ferroelectric capacitor and a LI through which the bottom electrode is electrically coupled to the diffusion region of the MOS transistor. |
申请公布号 |
WO2014209559(A1) |
申请公布日期 |
2014.12.31 |
申请号 |
WO2014US40886 |
申请日期 |
2014.06.04 |
申请人 |
CYPRESS SEMICONDUCTOR CORPORATION |
发明人 |
SUN, SHAN;RAMKUMAR, KRISHNASWAMY;DAVENPORT, TOM E. |
分类号 |
H01L21/8242 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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