| 摘要 |
<p>Provided is a light emitting device comprising: a first conductive nitride layer providing holes; a second conductive nitride layer providing electrons; an active layer interposed between the first conductive nitride layer and the second conductive nitride layer; and an electron blocking layer interposed between the first conductive nitride layer and the active layer, wherein, where luminosity measured at room temperature is a reference luminosity, high-temperature luminosity measured at temperature, which is higher than the room temperature, maintains at more than 90% of the reference luminosity. Also, the light emitting device of the present invention can improve degradation of optical characteristics caused by heat at high temperature.</p> |
