发明名称 PHOTORESIST COMPOSITION, RESIST PATTERN FORMING METHOD, AND POLYMER
摘要 <p>The present invention is a photoresist composition which contains (A) a polymer that has an acid-cleavable group, (B) an acid generator, and (C) a polymer that has a structural unit (I) represented by formula (1) and contains a fluorine atom. In formula (1), each of R1 and R2 independently represents a hydrogen atom, a methyl group or a trifluoromethyl group; each of E1 and E2 represents an oxygen atom, *1-CO-O- or *1-CO-NH-; A represents a divalent group that has an acid-cleavable group or an alkali-cleavable group in a linking chain; G represents a single bond or an (n + 1)-valent linking group; and n represents an integer of 1-3.</p>
申请公布号 KR20140148383(A) 申请公布日期 2014.12.31
申请号 KR20147026028 申请日期 2013.03.19
申请人 JSR CORPORATION 发明人 MIYATA HIROMU
分类号 G03F7/039;C08F20/10;C08F20/54;G03F7/004;H01L21/027 主分类号 G03F7/039
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