NITNIDE BASED FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME

摘要

A field effect transistor according to the present invention includes a first semiconductor layer doped in an n-type as a first polarity and having a drain electrode; a second semiconductor layer formed of non-doped semiconductor on the first semiconductor layer; a third semiconductor layer doped in a p-type as a second polarity and having a source electrode on the second semiconductor; an insulating layer formed on the third semiconductor layer; a gate electrode formed on the insulating layer; and a blocking layer formed in low areas of the gate electrode on the insulating layer and the source electrode to block a vertical current path between the source electrode and the drain electrode. When a gallium nitride field effect transistor is embodied according to the present invention described above, the transistor may have high-voltage resistance, high current density and a normally off property.