| 摘要 |
Disclosed is a light emitting device with improved current spreading. The light emitting device according to an embodiment of the present invention comprises: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode disposed on the first conductive semiconductor layer; and a second electrode disposed on the second conductive semiconductor layer, wherein the light emitting structure includes a mesa-etched region where a portion of the second conductive semiconductor layer, active layer, and first conductive semiconductor layer is etched to expose the first conductive semiconductor layer, the first electrode is disposed on the first semiconductor layer exposed through the mesa-etched region, a first transparent electrode layer is disposed between the second conductive semiconductor layer and the second electrode, and a second transparent electrode layer is disposed between portions of the first conductive semiconductor layer separated from each other with the mesa-etched region placed centered. |
