| 发明名称 | Memristor cell structures for high density arrays | ||
| 摘要 | A memristor array includes a lower layer of crossbars, upper layer of crossbars intersecting the lower layer of crossbars, memristor cells interposed between intersecting crossbars, and pores separating adjacent memristor cells. A method forming a memristor array is also provided. | ||
| 申请公布号 | US8921960(B2) | 申请公布日期 | 2014.12.30 |
| 申请号 | US201213560935 | 申请日期 | 2012.07.27 |
| 申请人 | Hewlett-Packard Development Company, L.P. | 发明人 | Yang Jianhua;Zhang Minxian Max;Ribeiro Gilberto Medeiros;Williams R. Stanley |
| 分类号 | H01L29/86 | 主分类号 | H01L29/86 |
| 代理机构 | Van Cott, Bagley, Cornwall and McCarthy PC | 代理人 | Van Cott, Bagley, Cornwall and McCarthy PC ;Nichols Stevens L. |
| 主权项 | 1. A memristor array comprising: a lower layer of crossbars; an upper layer of crossbars intersecting the lower layer of crossbars; memristor cells interposed between intersecting crossbars, each memristor cell comprising a mobile dopant movable by a switching voltage to change an electrical resistance of that memristor cell; pores separating adjacent memristor cells; and a capping layer covering said pores that varies in thickness, being thicker on one side of a memristor cell than an opposite side of that memristor. | ||
| 地址 | Houston TX US | ||