| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A semiconductor device includes a substrate, a compound semiconductor layer, and first and second semiconductor patterns. The substrate includes first and second regions. The first semiconductor pattern is on the compound semiconductor layer of the first region and includes an element semiconductor. The second semiconductor pattern is on the compound semiconductor layer of the second region and includes a Group III-V semiconductor material. |
| 申请公布号 |
US2014374797(A1) |
申请公布日期 |
2014.12.25 |
| 申请号 |
US201414276421 |
申请日期 |
2014.05.13 |
| 申请人 |
KWON Tae-Yong;KIM Sang-Su;YANG Jung-Gil;CHOI Jung-Dal |
发明人 |
KWON Tae-Yong;KIM Sang-Su;YANG Jung-Gil;CHOI Jung-Dal |
| 分类号 |
H01L29/10;H01L27/088;H01L29/165;H01L29/205;H01L29/78 |
主分类号 |
H01L29/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate including a first region and a second region; a compound semiconductor layer on the substrate; a first semiconductor pattern on the compound semiconductor layer of the first region, the first semiconductor pattern including an element semiconductor; and a second semiconductor pattern on the compound semiconductor layer of the second region, the second semiconductor pattern including a Group III-V semiconductor material. |
| 地址 |
Suwon-si KR |
