发明名称 SYSTEMS AND METHODS FOR FORMING THERMOELECTRIC DEVICES
摘要 A method for forming a thermoelectric element for use in a thermoelectric device comprises providing a mask adjacent to a substrate, the mask comprising a polymeric mixture, and bringing a template having a first pattern in contact with the mask to define a second pattern in the mask. The first pattern comprises one of holes and rods, and the second pattern comprises the other of holes and rods. Holes or rods of the second pattern expose portions of the substrate. Next, an etching layer is deposited adjacent to exposed portions of the substrate. The etching layer is configured to aid in etching the substrate. The substrate is subsequently etched with the aid of the etching layer.
申请公布号 US2014373888(A1) 申请公布日期 2014.12.25
申请号 US201314372443 申请日期 2013.01.17
申请人 SILICIUM ENERGY, INC. 发明人 Boukai Akram I.;Tham Douglas W.
分类号 H01L35/32;H01L35/34 主分类号 H01L35/32
代理机构 代理人
主权项 1. A method for forming a thermoelectric device, comprising: (a) providing a mask adjacent to a substrate, said mask comprising a polymeric mixture; (b) bringing a template having a first pattern in contact with said mask to define a second pattern in said mask, wherein said first pattern comprises one of holes and rods, wherein said second pattern comprises the other of holes and rods, and wherein holes or rods of said second pattern expose portions of said substrate; (c) depositing an etching layer adjacent to exposed portions of said substrate, wherein said etching layer is configured to aid in etching said substrate; and (d) etching said substrate with the aid of said etching layer.
地址 Ann Arbor MI US