MANUFACTURABLE SUB-3 NANOMETER PALLADIUM GAP DEVICES FOR FIXED ELECTRODE TUNNELING RECOGNITION
摘要
A technique is provided for manufacturing a nanogap in a nanodevice. An oxide is disposed on a wafer. A nanowire is disposed on the oxide. A helium ion beam is applied to cut the nanowire into a first nanowire part and a second nanowire part which forms the nanogap in the nanodevice. Applying the helium ion beam to cut the nanogap forms a signature of nanowire material in proximity to at least one opening of the nanogap.
申请公布号
WO2014204588(A1)
申请公布日期
2014.12.24
申请号
WO2014US37235
申请日期
2014.05.08
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
ASTIER, YANN;BAI, JINGWEI;GUILLORN, MICHAEL A.;PAPA RAO, SATYAVOLU S.;SMITH, JOSHUA T.