| 摘要 |
<p>According to one embodiment, a semiconductor device (210-213) includes a substrate (150) having an upper surface (150a), a foundation insulating layer (160) provided on the upper surface (150a), and a thin film transistor (110-113). The thin film transistor (110-113)includes a first gate electrode (11), first, second and third insulating layers (21, 22, 23), a semiconductor layer (30), and first and second conductive layers (41, 42). The first gate electrode (11) is provided on a portion of the foundation insulating layer (160). The first insulating layer (21) covers the first gate electrode (11) and the foundation insulating layer (160). The second insulating layer (22) is provided on the first insulating layer (21), and has first, second and third portions (p1, p2, p3). The semiconductor layer (30) contacts the second insulating layer (22) on the third portion (p3), and has fourth, fifth portions and sixth portions (p4, p5, p6). The first conductive layer (41) contacts the fourth portion (p4). The second conductive layer (42) contacts the fifth portion (p5). The third insulating layer (23) covers a portion of the semiconductor layer (30).
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