| 发明名称 | Semiconductor devices and methods of manufacture | ||
| 摘要 | Semiconductor devices with reduced substrate defects and methods of manufacture are disclosed. The method includes forming a dielectric material on a substrate. The method further includes forming a shallow trench structure and deep trench structure within the dielectric material. The method further includes forming a material within the shallow trench structure and deep trench structure. The method further includes forming active areas of the material separated by shallow trench isolation structures. The shallow trench isolation structures are formed by: removing the material from within the deep trench structure and portions of the shallow trench structure to form trenches; and depositing an insulator material within the trenches. | ||
| 申请公布号 | US8916445(B1) | 申请公布日期 | 2014.12.23 |
| 申请号 | US201313969017 | 申请日期 | 2013.08.16 |
| 申请人 | International Business Machines Corporation | 发明人 | Leobandung Effendi |
| 分类号 | H01L21/331;H01L21/762;H01L21/02 | 主分类号 | H01L21/331 |
| 代理机构 | Roberts Mlotkowski Safran & Cole, P.C. | 代理人 | Percello Lou;Roberts Mlotkowski Safran & Cole, P.C. |
| 主权项 | 1. A method, comprising: forming a dielectric material on a substrate; forming a shallow trench structure and deep trench structure within the dielectric material; forming a material within the shallow trench structure and deep trench structure; and forming active areas of the material separated by shallow trench isolation structures, the shallow trench isolation structures being formed by: removing the material from within the deep trench structure and portions of the shallow trench structure to form trenches; anddepositing an insulator material within the trenches. | ||
| 地址 | Armonk NY US | ||