| 发明名称 | Lithographic apparatus and method | ||
| 摘要 | A lithographic apparatus includes a projection system that includes a plurality of reflective optics. One of the reflective optics is provided with an opening which passes through the reflective optic. The opening is closed by a covering layer that is substantially transparent to EUV radiation. The covering layer prevents contamination from entering the projection system, while allowing patterned EUV radiation to pass from the projection system onto a substrate. | ||
| 申请公布号 | US8917380(B2) | 申请公布日期 | 2014.12.23 |
| 申请号 | US201213442458 | 申请日期 | 2012.04.09 |
| 申请人 | ASML Netherlands B.V. | 发明人 | Loopstra Erik Roelof;Pekelder Sven;Nienhuys Han-Kwang |
| 分类号 | G03B27/54;G03B27/42;G03F7/20 | 主分类号 | G03B27/54 |
| 代理机构 | Pillsbury Winthrop Shaw Pittman LLP | 代理人 | Pillsbury Winthrop Shaw Pittman LLP |
| 主权项 | 1. A lithographic apparatus comprising: a projection system configured to project a patterned beam of radiation onto a substrate, the projection system comprising a plurality of reflective optics, wherein an opening passes through one of the reflective optics and through a wall of the projection system, anda covering layer configured to close the opening, wherein the covering layer is substantially transparent to EUV radiation. | ||
| 地址 | Veldhoven NL | ||