发明名称 Integrated circuit including a heat dissipation structure
摘要 One embodiment of an integrated circuit includes a discrete device that defines a top surface, an integrated circuit substrate, and a heat dissipation structure fully covering the top surface of the discrete device and being thermally connected to the integrated circuit substrate.
申请公布号 US8916966(B2) 申请公布日期 2014.12.23
申请号 US200410953135 申请日期 2004.09.28
申请人 TriQuint Semiconductor, Inc. 发明人 Mays Kenneth W.
分类号 H01L23/34;H01L23/48;H01L23/10;H01L23/367;H01L23/373 主分类号 H01L23/34
代理机构 Schwabe Williamson & Wyatt 代理人 Schwabe Williamson & Wyatt
主权项 1. A semiconductor device, that includes an integrated circuit with a horizontally and vertically continuous heat dissipation structure mounted on a printed circuit board, the semiconductor device comprising: a plurality of discrete power transistors each formed on a discrete device substrate and each including a mesa positioned thereon, each of said mesas extending upwardly from said device substrate so as to define a mesa top surface opposite the device substrate and a side mesa surface between the mesa top surface and the device substrate, wherein a first discrete device substrate of a first discrete power transistor is separate from a second discrete device substrate of a second discrete power transistor; the printed circuit board positioned opposite said mesas from said device substrates; and the continuous heat dissipation structure positioned on and extending completely across said top surface of each mesa and fully between the side surfaces of the mesas of adjacent ones of the discrete powered transistors and the discrete device substrates of each of the discrete power transistors with an absence of air gaps such that each of the discrete device substrates is insulated from another one of the discrete device substrates by the continuous heat dissipation structure, and fully between each of the discrete power transistors and the printed circuit board with an absence of air gaps such that said heat dissipation structure and said mesas together define an integrated structure that defines a smooth contact surface that contacts a smooth contact surface of said printed circuit board continuously across a width of each of said discrete power transistors, said heat dissipation structure defining a heat dissipation path from each of said mesas to said printed circuit board, wherein said heat dissipation structure includes an electrically insulative layer that fully covers said top surface of each mesa.
地址 Hillsboro OR US