发明名称 Refresh algorithm for memories
摘要 A method and apparatus for refreshing data in a flash memory device is disclosed. A counter is maintained for each memory block. When a memory block is erased, the counter for that erase block is set to a predetermined value while the remaining counters for other erase blocks are changed. When a memory block counter reaches a predetermined threshold value, the associated memory block is refreshed.
申请公布号 US8918584(B2) 申请公布日期 2014.12.23
申请号 US201414151095 申请日期 2014.01.09
申请人 Micron Technology, Inc. 发明人 Swaminathan Shuba
分类号 G06F12/00;G06F12/02;G11C16/34;G11C16/16;G11C16/10 主分类号 G06F12/00
代理机构 Dickstein Shapiro LLP 代理人 Dickstein Shapiro LLP
主权项 1. A memory device, comprising: at least one main memory block comprising a plurality of erase blocks; a control circuit configured to control erasing of the main memory block, the control circuit being configured, in response to an erasing of a first erase block of the main block, to set a count associated with the first erase block to a particular value and change a count associated with another erase block of the main block; and refresh the other erase block in response to the count associated with the other erase block reaching a threshold, wherein the refresh of the other erase block comprises: moving user data contained in the other erase block to a new location, if the other erase block contains user data when the other erase block is refreshed; and refreshing system data contained in the other erase block in place.
地址 Boise ID US