发明名称 |
Refresh algorithm for memories |
摘要 |
A method and apparatus for refreshing data in a flash memory device is disclosed. A counter is maintained for each memory block. When a memory block is erased, the counter for that erase block is set to a predetermined value while the remaining counters for other erase blocks are changed. When a memory block counter reaches a predetermined threshold value, the associated memory block is refreshed. |
申请公布号 |
US8918584(B2) |
申请公布日期 |
2014.12.23 |
申请号 |
US201414151095 |
申请日期 |
2014.01.09 |
申请人 |
Micron Technology, Inc. |
发明人 |
Swaminathan Shuba |
分类号 |
G06F12/00;G06F12/02;G11C16/34;G11C16/16;G11C16/10 |
主分类号 |
G06F12/00 |
代理机构 |
Dickstein Shapiro LLP |
代理人 |
Dickstein Shapiro LLP |
主权项 |
1. A memory device, comprising:
at least one main memory block comprising a plurality of erase blocks; a control circuit configured to control erasing of the main memory block, the control circuit being configured, in response to an erasing of a first erase block of the main block, to set a count associated with the first erase block to a particular value and change a count associated with another erase block of the main block; and refresh the other erase block in response to the count associated with the other erase block reaching a threshold, wherein the refresh of the other erase block comprises: moving user data contained in the other erase block to a new location, if the other erase block contains user data when the other erase block is refreshed; and refreshing system data contained in the other erase block in place. |
地址 |
Boise ID US |