发明名称 |
Canary based SRAM adaptive voltage scaling (AVS) architecture and canary cells for the same |
摘要 |
A memory bank includes memory cells and an additional cell to determine an operating voltage of the memory bank. The additional cell has an operating margin that is less than a corresponding operating margin of the other memory cells in the memory bank. |
申请公布号 |
US8917561(B2) |
申请公布日期 |
2014.12.23 |
申请号 |
US201414289072 |
申请日期 |
2014.05.28 |
申请人 |
STMicroelectronics International N.V. |
发明人 |
Asthana Vivek |
分类号 |
G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A. |
代理人 |
Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A. |
主权项 |
1. A method comprising:
setting an operational voltage for a memory bank comprising memory cells and at least one additional cell, wherein at least one operating margin of the additional cell is less than a corresponding margin of a memory cell; said setting comprising:
adjusting a supply voltage;carrying out an operation in the at least one additional cell;checking if the operation was carried out successfully; andadjusting the supply voltage if the operation was carried out successfully. |
地址 |
Amsterdam NL |