发明名称 Canary based SRAM adaptive voltage scaling (AVS) architecture and canary cells for the same
摘要 A memory bank includes memory cells and an additional cell to determine an operating voltage of the memory bank. The additional cell has an operating margin that is less than a corresponding operating margin of the other memory cells in the memory bank.
申请公布号 US8917561(B2) 申请公布日期 2014.12.23
申请号 US201414289072 申请日期 2014.05.28
申请人 STMicroelectronics International N.V. 发明人 Asthana Vivek
分类号 G11C5/14 主分类号 G11C5/14
代理机构 Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A. 代理人 Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
主权项 1. A method comprising: setting an operational voltage for a memory bank comprising memory cells and at least one additional cell, wherein at least one operating margin of the additional cell is less than a corresponding margin of a memory cell; said setting comprising: adjusting a supply voltage;carrying out an operation in the at least one additional cell;checking if the operation was carried out successfully; andadjusting the supply voltage if the operation was carried out successfully.
地址 Amsterdam NL