发明名称 SEMICONDUCTOR DEVICE
摘要 The semiconductor device includes a power element which is in an on state when voltage is not applied to a gate, a switching field-effect transistor for applying first voltage to the gate of the power element, and a switching field-effect transistor for applying voltage lower than the first voltage to the gate of the power element. The switching field-effect transistors have small off-state current.
申请公布号 US2014367679(A1) 申请公布日期 2014.12.18
申请号 US201414472605 申请日期 2014.08.29
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Yamazaki Shunpei;Koyama Jun
分类号 H01L29/786;H01L29/06 主分类号 H01L29/786
代理机构 代理人
主权项 1. (canceled)
地址 Atsugi-shi JP