| 摘要 |
<p>A substrate processing apparatus includes a first process liquid supply unit to supply a first process liquid to a center part of the top surface of a substrate, a substrate rotating mechanism to rotate the substrate, a gas supply unit to change pressure in an internal space of a chamber, and a suction unit. In the substrate processing apparatus, with the internal space of the chamber maintained in a reduced pressure atmosphere, as the first process liquid is supplied on the top surface of the substrate while the substrate is rotating, the first process liquid rapidly spreads from the center part to a perimeter part on the top surface. Accordingly, coating the top surface of the substrate with the first process liquid can be performed in a short time compared with under an increased pressure. Also, by letting the suction unit suck the first process liquid near edges of the substrate, the coating the top surface of the substrate with the first process liquid can be performed more rapidly. As a result, the time required for processing the substrate can be shortened.</p> |
