发明名称 |
PHASE-CHANGE MEMORY CELLS |
摘要 |
A phase-change memory cell for storing information in a plurality of programmable cell states. The memory cell includes: a phase-change material located between a first electrode and a second electrode for applying a read voltage to the phase-change material to read a programmed cell state; and an electrically-conductive component extending in a direction between the first and second electrodes in contact with the phase-change material and arranged to present, to a cell current produced by the read voltage, a lower-resistance current path than an amorphous phase of the phase-change material in any of the plurality of programmable cell states, said current path having a length dependent on a size of said amorphous phase, wherein a volume of the electrically-conductive component is greater than about half that of said phase-change material. |
申请公布号 |
US2014369113(A1) |
申请公布日期 |
2014.12.18 |
申请号 |
US201414296507 |
申请日期 |
2014.06.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Krebs Daniel;Sebastian Abu |
分类号 |
G11C13/00;H01L45/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
1. A phase-change memory cell for storing information in a plurality of programmable cell states, the memory cell comprising:
a phase-change material located between a first electrode and a second electrode for applying a read voltage to the phase-change material to read a programmed cell state; and an electrically-conductive component extending in a direction between the first and second electrodes in contact with the phase-change material and arranged to present, to a cell current produced by the read voltage, a lower-resistance current path than an amorphous phase of the phase-change material in any of the plurality of programmable cell states, said current path having a length dependent on a size of said amorphous phase, wherein a volume of the electrically-conductive component is greater than about half that of said phase-change material. |
地址 |
Armonk NY US |