| 摘要 |
This heterojunction field effect transistor is provided with a first contact part (20a) and a second contact part (15a). The length of the first contact part (20a) in the longitudinal direction is shorter than the length of a source electrode (12) in the longitudinal direction, and the length of the second contact part (15a) in the longitudinal direction is shorter than the length of a drain electrode (11) in the longitudinal direction. With respect to each drain electrode (11), the distance (X) from each end (17A, 17B) of the second contact part (15a) to each end (11A, 11B) of the drain electrode (11), said ends (11A, 11B) being on the outer sides of the second contact part (15a), is longer than the distance (Y) from each end (18A, 18B) of the first contact part (20a) to each end (12A, 12B) of the source electrode (12), said ends (12A, 12B) being on the outer sides of the first contact part (20a). |
