| 摘要 |
<p>Disclosed are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes: a first electrode layer (87); a second conductive semiconductor layer (13) on the first electrode layer (87); an active layer (12) on the second conductive semiconductor layer (13); a first conductive semiconductor layer (11) on the active layer (12); an Al y Ga 1-y N layer (where, 0 Œ©y‰¤1) (16) on the first conductive semiconductor layer (11); an In x Ga 1-x N pattern (where, 0 Œ©x‰¤1) (15) on the Al y Ga 1-y N layer (16); a gallium nitride semiconductor layer (14) on the In x Ga 1-x N pattern (15); and a pad electrode (81) on the gallium nitride semiconductor layer (14).</p> |
