| 摘要 |
Provided is a method for producing a thin-film transistor, the method involving an oxide semiconductor layer formation step in which an oxide semiconductor layer is formed from: a first region having a composition represented by In(a)Ga(b)Zn(c)O(d) (wherein a, b, c, d>0); and a second region which is disposed farther away from the gate electrode than the first region and which has a composition that is different from the first region and that is represented by In(e)Ga(f)Zn(g)O(h) (wherein e, f, g, h>0) in which f/(e+f)<=0.875. The method also involves a heat treatment step in which the oxide semiconductor layer is subjected to heat treatment at 300°C or higher in a moist atmosphere having an absolute humidity of 4.8 g/m3 or higher. |
