发明名称 |
Method for manufacturing semiconductor device and semiconductor device |
摘要 |
According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method includes forming a second stacked body on the planarized interlayer insulating film and on the uppermost stair. The second stacked body includes a second conductive film thicker than the first conductive film and a second insulating film stacked on the second conductive film. The method includes dividing the second stacked body into a select gate on the uppermost stair and a plurality of wall portions in a staircase region below the uppermost stair. The method includes forming a plurality of vias piercing the interlayer insulating film under a region between the wall portions and reaching the first conductive film of each of the stairs. |
申请公布号 |
US8912593(B2) |
申请公布日期 |
2014.12.16 |
申请号 |
US201313916069 |
申请日期 |
2013.06.12 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Matsuda Toru |
分类号 |
H01L29/792;H01L29/66;H01L27/115 |
主分类号 |
H01L29/792 |
代理机构 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A semiconductor device comprising:
a first stacked body including a first insulating film and a first conductive film alternately stacked in a plurality and including a plurality of stairs processed in a staircase configuration; an interlayer insulating film provided on the stairs so as to fill a level difference between the stairs; a second stacked body provided on the interlayer insulating film and on an uppermost stair and including a second conductive film and a second insulating film provided on the second conductive film, the second conductive film being thicker than the first conductive film and including a select gate on the uppermost stair and a plurality of wall portions in a staircase region below the uppermost stair; and a plurality of vias extending in a stacking direction of the first insulating film and the first conductive film in the interlayer insulating film under a region between the wall portions and being connected to the first conductive film of each of the stairs. |
地址 |
Minato-ku JP |