| 发明名称 |
Method for Making a Mask With a Phase Bar in An Integrated Circuit Design Layout |
| 摘要 |
A method for making a mask includes receiving an integrated circuit (IC) design layout and identifying at least one targeted-feature-surrounding-location (TFSL) in the IC design layout, wherein TFSL is identified by a model-based approach. The method further includes inserting at least one phase bar (PB) in the IC design layout and performing an optical proximity correction (OPC) to the IC design layout having the at least one PB to form a modified IC design layout. A mask is then fabricated based on the modified IC design layout. |
| 申请公布号 |
US2014365982(A1) |
申请公布日期 |
2014.12.11 |
| 申请号 |
US201414465449 |
申请日期 |
2014.08.21 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Liu Ru-Gun;Chou Shou-Yen;Ng Hoi-Tou;Hsieh Ken-Hsien;Chen Yi-Yin |
| 分类号 |
G03F1/36;G06F17/50 |
主分类号 |
G03F1/36 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for making a mask, comprising:
receiving an integrated circuit (IC) design layout; identifying at least one targeted-feature-surrounding-location (TFSL) in the IC design layout, wherein TFSL is identified by a model-based approach; inserting at least one phase bar (PB) in the IC design layout; performing an optical proximity correction (OPC) to the IC design layout having the at least one PB to form a modified IC design layout; and fabricating the mask based on the modified IC design layout. |
| 地址 |
Hsin-Chu TW |
