SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device and a method of manufacturing the same are provided. The device includes first and second line pattern units configured to extend substantially parallel to one another in a first direction and alternately disposed such that end portions of the first and second line pattern units are arranged in a diagonal direction, third and fourth pattern units configured to respectively extend from the end portions of the first and second line pattern units in a second direction crossing the first direction, first contact pad units respectively formed in the third line pattern units disposed a first distance from the end portions of the first line pattern units, and fourth contact pad units respectively formed in the fourth line pattern units disposed a second distance from the end portions of the second line pattern units. Here, the second distance is different from the first distance.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming an etched layer on a semiconductor substrate; forming a first hard mask pattern including first-directional line pattern units disposed on the etched layer substantially parallel to one another, second-directional line pattern units configured to respectively extend from end portions of the first-directional line pattern units substantially parallel to one another, and contact pad units alternately disposed in the second-directional line pattern units disposed different distances from the end portions of the first-directional line pattern units; and etching the etched layer by performing an etching process using the first hard mask pattern as an etch mask to form a main pattern.