发明名称 |
METAL NITRIDE MATERIAL FOR THERMISTORS, METHOD FOR PRODUCING SAME, AND FILM-TYPE THERMISTOR SENSOR |
摘要 |
Provided are: a metal nitride material for thermistors that has high heat resistance, is highly reliable, and can be formed into a film directly on, e.g., a film without firing; a method for producing said metal nitride material; and a film-type thermistor sensor. This metal nitride material used for thermistors is made of a metal nitride represented by the general formula VxAlyNz (wherein 0.70 ≤ y/(x+y) ≤ 0.98, 0.4 ≤ z ≤ 0.5, and x+y+z = 1), and has a single-phase wurtzite hexagonal crystal structure. This method for producing said metal nitride material for thermistors comprises a film formation step for forming a film by performing reactive sputtering in a nitrogen-containing atmosphere by using a V-Al alloy sputtering target. |
申请公布号 |
WO2014196486(A1) |
申请公布日期 |
2014.12.11 |
申请号 |
WO2014JP64558 |
申请日期 |
2014.05.26 |
申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
FUJITA, TOSHIAKI;TANAKA, HIROSHI;NAGATOMO, NORIAKI |
分类号 |
H01C7/04;C01G31/00;C23C14/06;C23C14/34;C30B29/38;G01K7/22;H01C17/12 |
主分类号 |
H01C7/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|